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사업단 최종목표 달성을 위한 사업화 및 원천기술 확보에 대한
방안을 마련하고 미래장기전략을 수립하기 위한 3단계 2차년도 제1차 과제책임자회의가
지난 6월 21일에
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사무국 회의실에서 실시되었다.
... +more
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사업단에서는 3단계 1차년도(2006년 4월~2007년 3월)의
사업활동내용과 연구성과를 홍보하고자『2006 Annual Report』를
제작하였습니다.
사업단 홈페이지의 사업홍보-대국민홍보 게시판에 들어오시면 본
자료를 보실 수 있습니다. ... +more
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7월 6일(금), 이조원
단장 강연으로 시작 |
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사업단에서는
2007년 7월 매주 금요일마다
부산역에서 "금요일에 과학터치" 강연을 진행하게 된다.
7월 한달동안 매주 금요일 저녁에 나노기술은 무엇이고, 사업단에서
진행되고 있는 연구내용 및 성과 등을 강연하게 된다. 그 첫 번째 시간으로 사업단의 이조원
단장이 "10억분의
1미
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터가 여는 멋진 신세계"라는 주제로 강연을 시작한다.
... +more |
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3단계 2차년도 제1차 BMD 자문회의
실시
○ 일 정 : 2007년
7월 23일(월) 오후 3시
○ 장 소 :
KIST 국제협력동 1층 제4회의실
○
BMD(Business Model
Development)
사업단,『금요일에 과학터치』강연
실시
○ 일 정 : 2007년
7월 매주 금요일 저녁 7시~9시
○ 장 소 : 부산역 5층
대회의실
○ 강연자 : 이조원
단장(6일), 최중범 교수(13일),
서광석 교수(20일), 김기범
교수(27일)
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한양대 전형탁 교수팀(단원자층 증착기술
개발)
1) 전형탁 교수, 국제학회
논문발표
○ 일 정 :
2007년 6월 24일 ~
27일
○ 장 소 : Kona
Kai Resort, San Diego, CA,
USA
○ 학회명 : 7th
International Conference on
Atomic
Layer
Deposition
2) 3단계 2차년도 제1차
DR(Design Review) 실시
○ 일
정 : 2007년 7월 6일(금) 오후
4시
○ 장 소 : 한양대
신소재공학관
318호
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<한국과학기술단체총연합회
2007/6/19일자
기사> |
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유엔 산하
정부간기후변화위원회(IPCC)는 최근 지구온난화로 인한 대재앙을 막는데 인류에게 주어진
시간은 8년뿐(2015년) 이라는 충격적인 내용의 보고서를 발표했다.
보고서에
따르면 20세기에 걸쳐 지구 평균온도는 0.74℃ 상승했는데, 2100년이 되면 최대
6.4℃ 더 올라 ... +more
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국내 과학기술자들은 특허를 수익창출을 위해서라기보다는 연구실적
평가를 위해 출원하는 경향이 있는 것으로 나타났다. 또한 연구성과에 대한 기술이전 시
기록의 충실성 및 관련 자료첨부 등에 있어서는 다소 소극적인 것으로
드러났다.
특허청은 이 같은 내용을 담은 '한-미 과학기술자 특허관리
실태조사'를 발표했다. ...
+more
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현재 진행 중인 ‘한미 자유무역협정(FTA)’ 협상을 놓고 찬반
논란이 한창이다. 논란의 핵심은 ‘국익(國益)’. 특히 여러 분야에 걸쳐 양국 간의
차이를 보이고 있는 과학기술
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력 문제는 협상에 민감한
영향을 미치고 있는 것으로 알려지고 있다. .. +more | |
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기술이전으로 발생한 기술료를 연구자 외에 기술 이전에 기여한 이도
받을 수 있게 됐다. 또 기술이전·사업화 정책심의회의 효율적인 운영을 위해 실무위원회가
설치된다.
정부는 26일 서울 세종로 정부중앙청사에서 한덕수 국무총리 주재로
국무회의를 열어 이 같은 내용을 핵심으로 한 ‘기술이전촉진법시행령 전부개정령(안)’을
포함한 51건의 안건을 의결했다. ... +more
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-
정부,
기술이전 점검 '뒷짐'... 투자효과 의문
-
트랜지스터로
바이오센서 개발
-
전
세계 반도체 시장 성장률 대폭 감소
-
삼성전자·IBM
나노 제휴
-
D램·낸드플래시
'강자'... 기술력 '으뜸'
-
내년
R&D예산, 연구장비 중복 도입 차단
-
'국가R&D'
과제 문단속 강화
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※ 아래의 내용은
테라급나노소자개발사업단에서 발간하는 Nano-Electronics Forum의 목차를 정리한 것으로
전문을
보시려면
상단의 Nano-Electronics Forum [2007. 6. 29]를 클릭하여 첨부화일을 다운로드
하여주시기 바랍니다. |
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1.
Nanosoccer
debuts at RoboCup 2007 |
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The glass microchip on the left
measures 3 centimeters across - more than the
diameter of a quarter on the right - and is
divided into |
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sixteen 2.5 millimeter by 2.5
millimeter nanosoccer playing fields. ...
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2. Bright future for
nanowire light source
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In a demonstration of the
nanowire light source's fluorescence mode, a
nanowire in the grip of an infrared beam was
touched to a fluorescent bead causing the bead
to fluorescence orange at the contact point. ...
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3. New, invisible
nano-fibers conduct electricity, repel dirt
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A scanning electron microscope
image of plastic fibers grown on a sheet of
transparent film. Ohio State University
researchers have invented a technique for
|
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carpeting a surface with tiny
plastic fibers. ...
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4. Transparent transistors
to bring future displays, 'e-paper'
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Researchers have used
nanotechnology to create transparent transistors
and circuits, a step that promises a broad range
of applications, from e-paper and flexible color
screens for consumer electronics to "smart
cards" and ...
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5. Electron beam 'carves'
the world's smallest devices
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Physicists at the
University of Pennsylvania are using a new
technique to craft some of the tiniest metal
nanostructures ever created, none larger than 10
nanometers. ... |
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6. Significant step
towards European joint technology initiative on
nanoelectronics
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A significant step towards
the joint technology research programme on
Nanoelectronics driven by European companies,
universities and research institutes was made
during a meeting held at the IMEC premises in
Leuven on May 31st. ... |
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7. Scientists
demonstrate high-performing room-temperature
nanolaser
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Scientists at Yokohama National
University in Japan have built a highly efficient
room-temperature nanometer-scale laser that
produces stable, continuous streams of
near-infrared laser light. The overall device has
a width of several microns (millionths of a
meter), ... |
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8. Carnegie Mellon
Chemists Use Grease To Advance Organic
Semiconductor Processing
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Any machinist will tell you
that a little grease goes a long way toward making
a tool work better. And that may soon hold true
for plastic electronics as well. ... |
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9. Breakthrough in
Nanomachining and Organic Molecular
Breakdown
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Engineering researchers at the
University of Arkansas and the University of
Nebraska-Lincoln have discovered a novel
nanomachining process that will help manufacturers
produce superior nanoscale devices ... |
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10. Major U.S. Maker of
High Performance MEMS Motion Sensors Orders Tegal
Endeavor AT
PVD Tool
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Tegal Corporation, a leading
designer and manufacturer of plasma etch and
deposition systems used in the production of
integrated circuits, MEMS, and nanotechnology
devices, ... |
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1.
Graphene-Silica
Composite Thin Films as Transparent
Conductors |
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Transparent and electrically
conductive composite silica films were
fabricated on glass and hydrophilic
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SiOx/silicon substrates by
incorporation of individual graphene oxide
sheets into silica sols followed by
spin-coating,
... | |
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2. Hierarchical Placement
and Associated Optoelectronic Impact of Carbon
Nanotubes in Polymer- Fullerene Solar
Cells
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Since their discovery, carbon
nanotubes (CNTs) have been considered to be
promising candidates for polymer-based solar
cells, but their functional |
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incorporation and utilization in
such devices have been limited due to processing
bottlenecks.
... | |
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3. Fabrication and
characterization of highly reproducible, high
resistance nanogaps made by focused ion beam
milling
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Nanoelectrodes were fabricated
combining photolitho- graphy, electron beam
lithography and focused ion beam milling allowing
for large scale integration and nanoengineering of
the electrode properties. ... |
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4. Nanoscale indent
formation in shape memory polymers using a heated
probe tip
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This paper
presents experimental investigation of nanoscale
indentation formation in shape memory polymers.
The polymers were synthesized by photo-
polymerizing a tert-butyl acrylate (tBA) monomer
with a poly(ethylene glycol dimethacrylate)
(PEGDMA) crosslinker. ... |
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5. A silicon-on-insulator
vertical nanogap device for electrical transport
measurements in aqueous electrolyte
solution
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A novel concept for metal electrodes with few
10 nm separation for electrical conductance
measurements in an aqueous electrolyte
environment is presented. Silicon-on-insulator
(SOI) material with 10 nm buried silicon dioxide
serves as a base substrate for the formation of
SOI plateau structures which,
... | |
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6. Impact of oxide
substrate on electrical and optical properties of
carbon nanotube devices
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We have studied
suspended nanotube devices to investigate directly
the impact of oxide substrate on the properties of
nanotubes. The 1/f noise amplitude is reduced by
about one order of magnitude when the nanotube is
suspended, ... |
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7. Electrical conduction
and transmission coefficients of suspended
multiwalled carbon nanotubes |
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Room temperature
electrical transport measurements have been made
on suspended arc-discharge, multi-walled carbon
nanotubes (MWNTs) coated with a thin polymer layer
using high precision manipulators within a
scanning electron microscope. ... |
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8. Trapping of 27 bp–8
kbp DNA and immobilization of thiol-modified DNA
using dielectrophoresis
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Dielectrophoretic trapping of six
different DNA fragments, sizes varying from 27 to
8416 bp, has been studied using confocal
microscopy. The effect of the DNA length and the
size of the constriction between nanoscale
fingertip electrodes on the trapping efficiency
have been investigated. ... |
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1. SEMICON West 2007. San
Francisco, CA. |
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July 16 - 20, 2007
Recent advances in high-k metal gates have
been hailed as the biggest innovation in
semiconductors in four decades. SEMICON West has
high-k covered plus a whole lot more—from advanced
materials to metrology to
e-manufacturing, ... |
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2. Seeing at the
Nanoscale V. Santa Barbara, CA. |
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July 24 - 27, 2007
Nanoscale V, the annual scientific conference
focusing on nanostructural imaging,
characterization, and modification using scanning
probe microscopy (SPM) and related techniques.
... |
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1. US20070148991A1:
Method of fabricating nanodevices
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| A method of batch
fabrication using established photolithographic
techniques allowing nanoparticles or nanodevices
to be fabricated and mounted into a macroscopic
device in a repeatable, reliable manner suitable
for large-scale mass production. ...
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2. US20070148963A1:
Semiconductor devices incorporating carbon
nanotubes and composites
thereof
|
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| Methods of utilizing
carbon nanotubes or composites thereof as hole
plugs in vias or in contact holes for connecting
conductive layers in integrated circuits are
disclosed. Integrated circuits and integrated
circuit layers formed by the methods are also
disclosed. ...
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3. US20070148949A1:
Nanostructure-based package interconnect
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| An embodiment of the
present invention is an interconnect technique.
A nanostructure bump is formed on a die. The
nanostructure bump has a template defining
nano-sized openings and metallic nano-wires
extending from the nano-sized openings. ...
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4. US20070148815A1:
Nano-array and fabrication method thereof
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The invention provides a method
for fabricating a nano-array comprising the
following steps. A template with a plurality of
nano-holes is provided. A polymer is embossed by
the template to integrally form a plurality of
nano-protrusions thereon, and ...
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5. US20070148547A1:
Modification of an anode material and a
preperation method thereof
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A modification of an anode
material, which is used as a carbonaceous
material of an anode of a Lithium-ion secondary
battery, is characterized in that the surface of
the carbonaceous material is plated with Sn—P or
Ni—Sn—P nanoparticles.
... | |
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6. US20070145542A1:
Nano-wire electrode structure
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An electronic device such as a
sensor or a NEMS. The electronic device
comprises at least one substrate; a plurality of
electrodes disposed on the substrate; and at
least one nano-wire growing from an edge of a
first electrode to an edge of a second
electrode. ...
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7. US20070145454A1:
SCALABLE INTEGRATED LOGIC AND NON-VOLATILE
MEMORY
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A scalable, logic transistor has a
pair of doped regions for the drain and source.
A gate insulator layer is formed over the
substrate and between the drain and source
regions. ... |
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8. US20070145453A1:
Dielectric layer for electronic devices
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A dielectric layer for
electronic devices is disclosed herein. The
dielectric layer comprises inorganic
nanoparticles dispersed in a polymer selected
from the group consisting of polysiloxane,
polysilsesquioxane, and mixtures thereof.
... |
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9. US20070145386A1:
Semiconductor light emitting device and method
of manufacturing the same
|
|
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| Provided are a semiconductor light
emitting device having a nano pattern and a
method of manufacturing the semiconductor light
emitting device. The semiconductor light
emitting device includes: a semiconductor layer
comprising a plurality of nano patterns,
... | |
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10. US20070145375A1:
Method of manufacturing nanowire, method of
manufacturing a semiconductor
apparatus including nanowire and semiconductor
apparatus
formed from the same
|
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A method of
manufacturing a nanowire, a method of
manufacturing a semiconductor apparatus
including a nanowire and a semiconductor
apparatus formed from the same are provided.
... |
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11. US20070145356A1:
Carbon nanotube interdigitated sensor
|
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| A carbon nanotube sensor (30), for
determining the degree of the presence of an
unwanted environmental agent, includes a
plurality of carbon nanotubes (18). The sensor
(30) comprises first and second conducting
layers (32, 34) having alternatively
interdigitated fingers (36,
38). ... | |
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12. US20070145344A1:
Resistance-change nanocrystal memory
|
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A resistance-change nanocrystal
memory is proposed, which includes at least one
memory unit. The memory unit further includes a
channel and nanocrystals embedded in the
channel. Electric charges in the nanocrystals
are accessed, ...
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13. US20070141796A1:
Nonvolatile memory device and methods of forming
the same
|
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|
|
Example embodiments relate to a
semiconductor memory device and methods of
forming the same. Other example embodiments
relate to a |
|
nonvolatile memory device and
methods of forming the same. ...
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14. US20070141762A1:
Deletable nanotube circuit
|
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Carbon nanotube template arrays
may be edited to form connections between
proximate nanotubes and/or to delete undesired
nanotubes or nanotube junctions. ... |
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15. US20070138940A1:
Surface electron emission device and display
device having the same
|
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|
Provided are a surface electron
emission device and a display device having the
same. The surface electron emission device may
include a lower electrode, an insulating layer,
and ... | |
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16.
US20070138583A1: Nanoparticle Vibration and
Acceleration Sensors
|
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|
Nanoscale acceleration and vibration sensors
comprise a thin beam attached to a first
substrate, being generally suspended over the
first substrate by a cantilevered attachment. The
thin beam functions as a second substrate for a
coating that has a resistivity that varies with
strain in the beam. ... |
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|
17.
US20070138525A1: Mechanical memory device and
method of manufacturing the same
|
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|
A memory device that performs writing and
reading operations using a mechanical movement of
a nanowire, and a method of manufacturing the
memory device are provided. ... |
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|
18. US20070138010A1:
Embedded nanotube array sensor and method of
making a nanotube polymer
composite
|
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A method of producing
polymer/nanotube composites where the density
and position of the nanotubes (11) within the
composite ca be controlled.
... | |
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19. US7236667:
Techniques for use of nanocavities to enhance
quantum processing with photons and the Zeno
effect
|
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|
Techniques are provided for
placing atoms inside an appropriate nanocavity
for enhancing two-photon absorption and quantum
information processing based on the Zeno effect.
... | |
|
20. US7235912:
Diamond-like carbon thermoelectric conversion
devices and methods for the use and manufacture
thereof |
|
|
|
Diamond-like carbon based
thermoelectric conversion devices and methods of
making and using the same which have improved
conversion efficiencies and increased
reliability. ...
| |
|
21.
US7235475: Semiconductor nanowire fluid sensor and
method for fabricating the same
|
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|
|
Nanowire fluid sensors are provided. The
fluid sensors comprise a first electrode, a
|
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second electrode, and at least one nanowire
between the first electrode and the second
electrode. ... | |
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22.
US7235443: Non-volatile memory and method of
manufacturing floating gate
|
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|
|
A method of manufacturing a floating gate is
provided. The method includes the steps of
forming a tunneling layer on a substrate, and
forming a film layer containing a semiconductor
component on the tunneling layer.
... | |
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23.
US7233101: Substrate-supported array having
steerable nanowires elements use in electron emitting
devices
|
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|
|
In accordance with the inventions, a new
configuration of spaced-apart nanostructures is
provided as well as a variety of improved
articles using the new configuration. Improved
articles include microwave amplifiers,
... | |
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24.
US7232754: Microelectronic devices and methods for
forming interconnects in microelectronic
devices
|
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|
Microelectronic devices,
methods for packaging microelectronic devices, and
methods for forming interconnects in
microelectronic devices are disclosed herein. ...
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25. EP1797604A1:
ELECTRIC DEVICE WITH NANOWIRES COMPRISING A PHASE
CHANGE MATERIAL |
|
|
Published / Filed: 2007-06-20 / 2005-08-19
Application Number: EP2005000776276
IPC
Code: Advanced: H01L 27/24; H01L 45/00;
Priority Number: 2005-08-19
WO2005IB0052729
2004-09-27
EP2004000104687
2005-08-19
EP2005000776276 ... |
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